Chinese DRAM Manufacturer, Innosilicon, Achieves 10,000 Mbps Transfer Rates on LPDDR5X Memory
JEDEC officially sets the LPDDR5X standard at 8533 Mbps while the LPDDR5 standard is set at 6400 Mbps. Innosilicon went a step ahead and achieved a major breakthrough in their own development for the LPDDR5X DRAM. The Chinese chip manufacturer hit 10,000 Mbps (10 Gbps) on its LPDDR5X/LPDDR5/DDR5 IP. This is a 56% increase over the LPDDR5-6400 and a 17% increase over the LPDDR5X-8533 standards. With these speeds, the company also noticed a 15% reduction in latency, making it a suitable product for 5G communication, automobiles, AI edge computing, and AR/VR devices.
Innosilicon LPDDR5X-10,000 Mbps (80 GB/s Bandwidth) JEDEC LPDDR5X - 8,533 Mbps (68.2 GB/s Bandwidth) JEDEC LPDDR5 - 6,400 Mbps (51.2 GB/s Bandwidth)
Innosilicon also complete mass production verification of its LPDDR5X DRAM with advanced nodes such as 5/7nm and 12/14nm. This means that high-speed memory chips can now enter the mass production phase. Surely, 10 Gbps speeds is definitely a breakthrough in DRAM speeds and we can expect the first devices powered by such high-speed memory in the coming year. Innosilicon is also offering a range of other DRAM solutions such as GDDR6/X, HBM3/2E, and LPDDR5/X/4/4X (DDR5 / DDR4). News Source: MyDrivers
